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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). A L KTA1504S EPITAXIAL PLANAR PNP TRANSISTOR E B L Complementary to KTC3875S. G Low Noise : NF=1dB(Typ.), 10dB(Max.). 2 3 1 P P C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB PC Tj Tstg -50 -50 -5 -150 -30 150 150 -55 150 V V V mA mA mW 1. EMITTER 2. BASE 3. COLLECTOR K CHARACTERISTIC SYMBOL RATING UNIT M SOT-23 Marking h FE Rank Type Name Lot No. AS ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note : hFE Classification O:70 140 , Y:120 ICBO IEBO ) TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz VCE=-6V, IC=-0.1mA f=1kHz, Rg=10k 400 MIN. 70 80 TYP. -0.1 4.0 1.0 MAX. -0.1 -0.1 400 -0.3 7.0 10 V MHz pF dB UNIT A A SYMBOL hFE(Note) VCE(sat) fT Cob NF 240 , GR(G):200 2001. 2. 24 Revision No : 2 J MAXIMUM RATING (Ta=25 ) DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 N H D 1/2 KTA1504S I C - V CE -240 COLLECTOR CURRENT I C (mA) -200 -160 -120 -0.5 -2.0 COMMON EMITTER Ta=25 C -1.5 -1.0 h FE - I C 3k DC CURRENT GAIN h FE COMMON EMITTER 1k 500 300 Ta=100 C Ta=25 C -80 -40 0 I B =-0.2mA 100 50 Ta=-25 C 0 0 -1 -2 -3 -4 -5 -6 -7 30 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) TRANSITION FREQUENCY f T (MHz) -1k -500 -300 3k COMMON EMITTER I C /I B =10 fT - IC COMMON EMITTER VCE =-10V Ta=25 C 1k 500 300 -100 -50 -30 Ta =1 00 C Ta=25 C Ta=-25 C 100 50 30 -0.1 -0.3 -1 -3 -10 -30 -100 -300 -10 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I B - V BE COMMON EMITTER VCE =-6V Pc - Ta COLLECTOR POWER DISSIPATION P C (mW) -0.8 -1.0 -1.2 200 -1k BASE CURRENT I B (A) -300 -100 -30 -10 -3 -1 -0.3 0 150 Ta=2 5C Ta=25 C Ta=1 00 C 100 50 -0.2 -0.4 -0.6 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) BASE-EMITTER VOLTAGE VBE (V) 2001. 2. 24 Revision No : 2 2/2 |
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